6 results
Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J5.7
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- 2001
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Modeling of Dopant Defect Interactions
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J9.1
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- 2001
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Effect of Arsenic on Extended Defect Evolution in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 669 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, J5.2
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- 2001
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Phosphorus / Silicon Interstitial Annealing After Ion Implantation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B6.6
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- 2000
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Reaction of Excess Silicon Interstitals in the Presence of Arsenic and Germanium
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B8.4
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- 2000
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The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B5.8
- Print publication:
- 2000
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